| PART |
Description |
Maker |
| NESG2107M33-T3-A NESG2107M33 NESG2107M33-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE687M33-T3-A NE687M33 NE687M33-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE687M03-T1-A NE687M03 NE687M03-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2107M33-T3-A |
NECs NPN SILICON TRANSISTOR 邻舍NPN硅晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| NE681M03-T1-A |
BREADBOARD COPPER CLAD 11.5X17,1
NECs NPN SILICON TRANSISTOR
|
Duracell
California Eastern Laboratories
California Eastern Labs
|
| NE677M04 NE677M04-T2 |
NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 邻舍中功率NPN硅高频晶体管
From old datasheet system
|
NIC Components, Corp.
Electronic Theatre Controls, Inc.
California Eastern Laboratories
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| UPA862TD-T3 UPA862TD |
NECs NPN SILICON RF TWIN TRANSISTOR
|
NEC[NEC]
NEC Corp.
|
| NE46134 NE46134-T1 NE46100 |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| NE681M13-T3-A NE681M13 NE681M13-A |
NECs NP SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
